Blackbody radiation source for producing constant planar energy flux

ABSTRACT

A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

This specification is a divisional of RICHARD S. MUKA, et. al.,"Semiconductor Processor Incorporating Blackbody Radiation Source WithConstant Planar Energy Flux", filed May 12, 1981, Ser. No. 262,838, andassigned to Varian Associates, Inc.

DESCRIPTION

This invention relates to an apparatus and process for processingsemiconductor materials and, more particularly, relates to an apparatusand process employing a blackbody radiation source with a constantplanar energy flux for annealing crystal structure and activatingdopants in semiconductor materials, increasing grain size inpolycrystalline semiconductor materials or otherwise thermallyprocessing semiconductor materials.

In the semiconductor industry, wafers of a single crystal semiconductormaterial, typically silicon, are processed to produce both discretedevices and integrated circuits. In the course of processing, thecrystalline lattice of the semiconductor material may be damaged. Forexample, during ion implantation the incident energetic ions will breakcovalent bonds between silicon atoms in the crystalline lattice. It isthus desired to eliminate the defects in the crystalline lattice byannealing at a sufficiently high temperature for a sufficiently longtime.

The thermal treatment that produces annealing of crystal damage alsoserves to activate the dopant species in the silicon, i.e., the dopantatoms such as boron, phosphorous or arsenic assume substitutional ornear-substitutional positions in the crystalline lattice so they mayserve as sources of charge carriers. See, e.g., A. Lietoila, et al,"Metastable As-Concentrations in Si Achieved by Ion Implantation andRapid Thermal Annealing", J. App. Phys., v. 52, p. 230 (1981).

In the production of thin films of semiconductor materials it isdesirable to increase the grain size of polycrystalline material or toconvert amorphous silicon into an epitaxial silicon layer. Theapplication of thermal energy in an appropriate manner may be used toaccomplish these objectives. See, e.g., J. C. C. Fan, et al, "LateralEpitaxy by Seeded Solidification for Growth of Single-Crystal Si Filmson Insulators", App. Phys. Lett., v. 38, p. 365 (1981).

The conventional technique for thermally treating semiconductormaterials is furnace annealing. In this technique, for example, siliconwafers are taken in a batch of 100 to 200 wafers and placed in a carrier(boat). The boat is slowly inserted into a quartz tube mounted within acylindrical cavity and surrounded by resistance heating elements. Thetube is typically continuously purged from the inside towards theoutside by an inert gas. The cavity and quartz tube will typically havetemperature zones which become progressively hotter. By this process theaverage temperature experienced by the wafers gradually increases toabout 1000° C. The boat is then retained in the furnace at temperaturesof about 900° to 1100° C. for times on the order of one-half hour.Annealing under such conditions is generally satisfactory, especiallyfor lower dose implants on the order of 10¹⁰ -10¹⁴ /cm² ; activation isvirtually always satisfactory for such implants. However, uniformity ofdopant distribution is often not obtained since the time and temperaturecharacteristics of a given wafer are not identical to those of otherwafers in the batch; also, at a selected location on a given wafer thetemperatures experienced over time may vary. This distributionnon-uniformity is undesirable in the fabrication of complex integratedcircuits since yields are lowered. Also, the annealing of wafers at suchtemperatures for significant lengths of time produces undesirablespreading or redistribution of the dopant both laterally and vertically.This is especially undesirable for high dose implants on the order of10¹⁵ -2·10¹⁶ per cm² such as are used in fabricating high density MOSdevices. Spreading also makes shallow junction and/or VLSI devicesdifficult if not impossible. In addition, at high doses activationbecomes difficult with furnace annealing because the dopant atomscluster together and do not individually become electrically active.See, e.g., M. Y. Tsai, et al, "Shallow Junctions by High-Dose AsImplants in Si: Experiments and Modelling", J. App. Phys., v. 51, p.3230 (1980). Generally, it is desirable to obtain annealing andactivation with minimal dopant redistribution. Also, it is desirable toobtain as high an activation as possible in order to use as low animplantation dose as possible; for otherwise equivalent conditions thelower implantation dose the higher the throughput. Also, conventionalfurnace annealing is time consuming and is not particularly energyefficient, an important consideration for developing cost effective filmformation for photovoltaics.

Two techniques have been widely proposed for producing the fast thermaltreatment of semiconductor materials. In both cases, the surface of thematerial is exposed to an energy beam to raise the temperature of thematerial, and produce the desired result, e.g., annealing, activation,increased grain size, epitaxial regrowth or the like. Laser beams andelectron beams have been proposed and tried experimentally. With both,for example, it has been found that fast annealing, on the order ofmicroseconds, is possible. See e.g., W. L. Brown, Superfast Annealing,IEEE Spectrum, April 1981, p. 50 et. seq. and references cited therein.These techniques are under study in many laboratories although they havenot yet been incorporated widely in commercial products. Laser beams arehighly energy inefficient and require mechanical, electro-optical orelectro-mechanical scanning. Laser beams may also experienceinterference effects when a SiO_(x) pattern lies on a silicon substrate.In addition, the interface may be preferentially heated thereby causingthe oxide layer to come off. Electron beams are relatively energyefficient but produce neutral traps near insulator-semiconductorjunctions which can result in charging effects in operating devices overtime. A third approach which has been suggested is the use of flashlamps or arc lamps with a suitable reflector to thermally treatsemiconductor materials. For semiconductor wafers, this later approachhas the advantage that it heats the whole wafer at the same time andeliminates thermal non-uniformities by producing a planar isotropicthermal front. Its disadvantages are that the process is not energyefficient and may require complex optical elements. The optical systemalso must be able to eliminate scattered light or in some way use itconstructively. See, K. Nishiyama, "Radiation Annealing ofBoron-Implanted Silicon With a Halogen Lamp", Japanese Journal ofApplied Physics, v. 19, October 1980, P. L563.

It is an object of the present invention to provide an apparatus andprocess for thermally treating semiconductor materials by a blackbodyradiative source producing a constant planar energy flux.

It is another object of the present invention to increase grain size inpolycrystalline semiconductor material by an apparatus and process forapplying infrared radiation from a blackbody source which produces aconstant planar energy flux.

It is still another object of the present invention to regrow anepitaxial semiconductor layer from amorphous material by an apparatusand process for applying blackbody radiation with a constant planarenergy flux characteristic.

It is a further object of the present invention to provide an apparatusand process for annealing a semiconductor wafer by a blackbody radiationsource which produces a constant planar energy flux.

It is yet another object of the present invention to provide anapparatus and process for annealing a semiconductor wafer and obtaininga high activation of dopant species therein by means of a blackbodyradiation source producing a constant planar energy flux which is placedin close opposition to the wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, referencemay be had to the accompanying drawings which are incorporated herein byreference and in which:

FIG. 1 is a perspective, partially broken away view of processorapparatus in accordance with the present invention;

FIG. 2 is a side view of the apparatus of FIG. 1;

FIG. 3 is an edge view of a platen for holding a semiconductor wafer inthe processor apparatus of FIGS. 1 and 2;

FIG. 4 is a frontal view of a blackbody radiator which produces aconstant planar energy flux for incorporation in the processor apparatusof FIGS. 1 and 2;

FIG. 5 is a time line chart of the operation of the processor of FIGS.1-2 as a semiconductor wafer annealer;

FIG. 6 is a composite chart showing dopant redistribution for anannealing treatment in a conventional furnace annealer and in theprocessor of the present invention;

FIGS. 7a and 7b are, respectively, a plan and a side view, of analternate embodiment of a platen for use in the processor of the presentinvention; and

FIGS. 8a-8b are plan and side views, respectively, of an alternateblackbody radiator which produces a constant planar energy flux.

FIG. 8c shows an embodiment wing grooved rods.

SUMMARY OF THE INVENTION

A processor apparatus is provided in which a blackbody radiator having aconstant planar energy flux characteristic is placed in opposition tosemiconductor material. The blackbody source produces a constant planarenergy flux to uniformly heat the material. The source is heated to asufficiently high temperature for a sufficient time to thermally treatthe material, e.g., to anneal or activate a semiconductor wafer or toepitaxially regrow a thin epitaxial film.

The process of the present invention comprises the steps of presenting ablackbody radiator in opposition to semiconductor material to bethermally treated, radiatively heating the material to a sufficientlyhigh temperature for a sufficient time to accomplish the desired processresult. In the interval between presentation of successive samples ofthe material to the source, the source may be shuttered or idled toreduce energy consumption.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The ensuing description will cover in detail the application of theapparatus of the present invention to the annealing and activation ofsemiconductor wafers. This is the more significant commercialapplication of the processor at present. However, the treatment ofpolycrystalline semiconductor materials to increase grain size, theepitaxial regrowth of an amorphous layer and like applications may becarried out by the apparatus of the present invention. The advantages ofrapid isothermal anneal are throughput, minimal adverse side effectssuch as redistribution or damage to temperature sensitive layers,uniform treatment, and the possibility that oxide cap layers may not beneeded for implanted dopants with high vapor pressures. These advantagesapply generally to semiconductor materials. Throughout thisspecification the term blackbody radiator is used to describe thethermal source used in the processor. This term is intended to be broadenough to cover the concept of a grey body, a radiator whose spectralemissivity is less than one but at least a portion of whose emissivityas a function of wavelength is proportional to that of a blackbody.

Furnace annealers typically utilize resistive heaters surrounding aquartz tube containing the silicon wafers. The quartz tube iscontinuously purged by an oxidizing ambient such as moist air or aninert gas such as nitrogen. Heating is convective, conductive andradiative. There are thermal gradients from wafer-to-wafer and acrossindividual wafers. While thermal shock to the wafers is reduced by slowinsertion of the quartz tube into the furnace, by temperature gradientsbuilt into the furnace or by cycling of furnace temperature, there is atendency for wafers to bow or warp. Furnace annealers require powersupplies as large as 20 kilowatts and are expensive to operate.

With furnace annealing, dopant redistribution is not readily controlledsince the long anneal time allows lateral and vertical distribution tooccur to significant distances in the material on the order of 0.5 μm.Such gratuitous distribution is not acceptable when design ground rulesapproach 1 μm. Also, activation is not complete so that at high doselevels, e.g., about 10¹⁵ -2×10¹⁶ per centimeter squared, exceedinglylarge doses must be used since as much as 1/2 of the dopant atoms do nottake substitutional positions in the lattice. And some of the activationmay be metastable so that it does not persist over the life of theproduct. The problems of redistribution and incomplete activation becomeincreasingly important as device size decreases and as shallow junctiondevices having junction depths on the order of 0.2 μm are fabricated.

The conventional wisdom has been that in order to avoid the problemsassociated with conventional furnace annealing exceedingly fastannealing was required. Thus, laser, electron beam and flash lampannealing have been touted as allowing very fast annealing on the orderof microseconds or less. Such superfast annealing has the disadvantagethat the protective oxide layer over the semiconductor may peel or popoff. An annealing technique with annealing time midway between furnaceannealing and subsecond annealing is most desirable because satisfactorythroughput can be achieved with single wafer handling and satisfactoryactivation.

The apparatus of the present invention is illustrated by the processorof FIGS. 1-2. The processor is configured as a wafer annealer forreceiving, annealing and discharging semiconductor wafers. Waferannealing apparatus 10 is shown in FIG. 1 in partially broken-awayperspective view. Electronic control panels 13 are included withinhousing 11 and are accessible through doors 12. The apparatus utilizes aWayflow® gravity in, gravity out end station, as described in A. B.Wittkower, U.S. Pat. No. 3,901,183, for insertion and removal of siliconwafers. Other embodiments may employ other wafer handling techniquessuch as air track or the cassette-to-cassette system disclosed incopending application of G. L. Coad, "Wafer Transfer System", U.S. Pat.No. 4,311,427, issued Jan. 19, 1982. In the Wayflow® end station a waferis inserted from a cassette placed in cassette holder 18 throughentrance lock 16 (see A. B. Wittkower, et al, U.S. Pat. No. 3,954,191)into vacuum chamber 24, 20. The wafer slides by gravity feed onto aplaten 21, which is then oriented in an appropriate receiving position.After insertion of the wafer, platen 21 is rotated on axis 34 to anannealing position in opposition to blackbody source 22. Blackbodysource 22 may be shuttered by shutter plate 23 until the platen bringsthe wafer in opposition, source 22 may be on but idled until the waferis in place or some other transitional variation may be employed. Thedistance between the wafer and blackbody source 22 may vary from aboutone-quarter inch to as far as practicable. The actual distance isdetermined by uniformity requirements and the space taken up by shutter,shields and platen. For uniformity, the active area of the source ispreferably at least as large as the wafer since the viewing factor fromsource to wafer must be as high and uniform as possible. See M. Jakob,et al., Elements of Heat Transfer, Chp. XI-7 (1957). The temperature ofthe blackbody source will typically be 1400° C. to anneal and activate asilicon wafer. The anneal time will vary from about a second to aboutten seconds. Heating is radiative so that the wafer increases intemperature until at equilibrium it is nearly at the temperature of thethermal source. In practicable systems with cycle times of one to tenseconds, however, the wafer will not reach equilibrium as annealing andactivation is accomplished before the wafer reaches, e.g., 900° C. Afterthe annealing and activation is accomplished the wafer is removedthrough exit lock 17 into a cassette in cassette holder 19.

To promote uniform heating, it is desired to heat by radiation and notby convection. With conventional furnace annealing heating isaccomplished in large part by convection of the nitrogen, argon, orother gaseous ambient; such heating is not uniform due to thermallyinduced gas currents. In the process or apparatus of the presentinvention, control is maintained over the pressure at least between theblackbody source source and the semiconductor material. The pressure inthis region will vary from 10⁻⁷ Torr to ambient and is selected so thatthe mean free path of the gas is much greater than the source-to-waferdistance. Significant conduction heating is thereby eliminated. As seenin FIG. 2 a mechanical roughing pump 33 is used in series with adiffusion pump 32 to evacuate chamber 24 through tube 30 and baffle 31.Thus, the pressure in work chamber 24, 20 is controlled at the desiredlevel, with the criterion being, as stated above, that the mean freepath of the gas molecules should be much larger than the distancebetween blackbody source 35 and the wafter 37. Consequently, radiativeheating by thermal source 35 predominates. The efficiencies of thisapproach are high, even after vacuum equipment costs are considered,because only the wafer and not the walls of the chamber are heated.

The wafer 37 is heated by a constant planar energy flux produced byblackbody radiation source 35. The term constant planar energy fluxmeans that across a planar front a constant energy flux is produced bythis source. The power may vary due to ramping of the source but theenergy flux across the planar front will remain constant. The planarisotherm uniformly heats the wafer 37. This occurs in part becauseblackbody radiation is primarily in the infrared and silicon ispartially transparent to infrared. Thus, the radiation penetrates aseveral hundred micron thick wafer in milliseconds and heats ituniformly. When the surface temperature of the wafer is 900° C. thegradient through the wafer is less than 50° C. In addition, theradiation may be reflected from the platen and pass back through thewafer with additional absorption or may radiate back to the source andenhance source efficiency. As the temperature of silicon increases, thebandgap narrows and the portion of the blackbody spectrum below thebandgap increases to enhance absorption. Also, in heavily dopedsemiconductors the absorption is increased due to the doping and to thedamage in the crystal structure. See Victor I. Fistul', Heavily DopedSemiconductors Plenum (1969), Chp. 4; Jacques I. Pankove, OpticalProcesses in Semiconductors, Prentice Hall (1971) Chp. 3. As seen inFIG. 3, wafer 37 is positioned in close opposition to blackbody source35, on the order of an inch and preferably less than one-half inch.Thus, since radiative heating predominates, the temperature uniformityof the wafer 37 will essentially equilibrate to that of the emittingsurface of blackbody source 35, although in practice equilibrium isoften not reached. As a consequence of heating with no temperaturegradient across the plane of the wafer, the likelihood of bowing,warping or cracking of the wafer is reduced.

The wafer 37 is heated from a temperature on the order of 30° C. to atemperature on the order of 900° C. in a number of seconds, typicallyfrom one to ten seconds. The thermal input to the wafer, i.e., theintegral of energy flux over time, depends on the wafer mass, materialtype, dopant concentration and processing history of the wafer. Whenthermal treatment is complete the thermal source is either shuttered bymeans of mechanical shutter 23 shown in FIG. 1, is idled or is shut off.If the wafer is silicon it is preferably then cooled down to 700° C.,the approximate limit of incandescence (about 650°-700° C.), or less sothat it may be removed from the annealing chamber. This is accomplishedby actively cooling the platen or by rotating the platen so the waferradiates to the walls of the chamber which appear as a blackbody sink.As shown in FIG. 3 the platen 21 is comprised of a metal block 19 havingcoiled cooling tubes 40 affixed to the back thereof. The cooling tubes40 contain chilled water (10°-15° C. at one gallon per minute) or othercoolant and are connected by feedthroughs (not shown) to a sourceexternal to the annealing chamber. On the front side of the platen tofoster uniform annealing a circumferential strip 42 made from arefractory metal is provided. This strip may be heated to ensure auniform temperature profile between the edges of the wafer and thecenter. Planar shields 40 and 41 are also positioned between thermalsource 35 and the walls of the vacuum chamber. These shields reduce thethermal losses in accordance with the formula 1/n+1 where n is thenumber of shields in succession, providing there is a vacuum separationbetween each shield. In a preferred embodiment the platen is providedwith internal shields. As shown in FIG. 7b a pair of shields 65 and 66are interposed on spacers 67 between wafer 60 and platen body 68. Theseshields are fabricated from a refractory metal such as Ta or Mo. In thepreferred embodiment shown shield 65 has a concave-like shape so thatwafer 60 slides over it, making contact only at the peripheries of theshield. This protects the device side of the wafer if the back side isannealed and introduces an additional thermal barrier since heatconduction is minimized. In this preferred platen 62 refractory metalleaf springs 64 are attached to holders 63 as a stop for wafer 60.

One embodiment of the blackbody radiator 35 is shown in detail in FIG.4. To obtain uniform heating over the area of the wafer, in accordancewith the present, the blackbody source describes a uniform thermal mapover its surface. This uniform thermal map produces a planar thermalfront, i.e., on parallel planes in front of the source the sametemperature is experienced. Thus, since heating of the wafer isradiative the radiation heats the wafer with two dimensional isotropy.To produce the isotherms a planar source is preferably although notnecessarily used. In theory, as described subsequently, a non-planarsource can produce isotherms.

The preferred blackbody source is a resistive material which can bemolded or cut into a planar shape containing a pattern of strips. Themost preferred source is graphite, one example of which is Stackpole2020 which is available in sheet form and can be cut into the serpentinepattern shown in FIG. 4. Alternately, high purity pyrolitic graphite maybe used. A sheet 50 of graphite about one-sixteenth to one-eighth inchthick is configured to produce the serpentine pattern consisting ofstrips 54. The corners of blackbody source 55 are mounted on a metalframe 41 on opposing corners thereof by means of conductive contactstuds 52 and 53. In a preferred embodiment the carbon sheet iscounterbored before the strips are cut out in order to reduce the sheetthickness within the circumference 51. As a consequence, the temperatureis highest in the circular zone within circumference 51, the zone thatis placed in opposition to a wafer held in a platen. Typically, such aplanar serpentine strip source will use a power supply of about 5kilowatts, although the more efficient the shielding the lower therequired power input. For the most uniform heating the effective area ofthe blackbody source must be at least as large as the wafer being heatedand the wafer should be as close to the source as practicable. Inanother alternate embodiment a sheet of refractory metal, on the orderof 5 thousands inch thick, is stretched between two pairs of bar clamps.Such a sheet source has a lower emissivity than the preferred carbon andis subject to high in-rush currents since the resistivity variationswith temperature are much higher than with carbon.

A non-planar blackbody source which produces constant planar energy fluxis shown in FIGS. 8a-8c. Two cylindrical rods 70 and 71 are separated afixed distance apart within a suitable frame (not shown). A filamentwire of a refractory metal, e.g., 0.040" Ta, is wound around the rods toweave the pattern shown fully in FIG. 8b. The segments between the rodsare generally perpendicular to the rods with the displacement along thelength of the rods occurring as the filament wraps around each rod asshown in FIG. 8a. The displacement of the segments is uniform so theunderlying segments lie in the middle of the two adjacent overlyingsegments as seen in the plan view of FIG. 8b. Thus, by comparing FIGS.8a and 8b the identity of segment 72' with segment 72 and of segment 73'with segment 73 can be seen. The thermal effect in the front of thesource is to approximate a planar source and a constant planar energyflux is produced. In a preferred embodiment the rods are grooved asshown in FIG. 8c to permit the filament 75 to nest in groove 69 in rod70 as it wraps around from the upper side to the lower side or viceversa.

In annealing wafers in accordance with the process of the presentinvention it has been found that dopant redistribution has beensignificantly reduced. FIG. 6 compares dopant redistribution of boronimplanted silicon for a furnace annealer (+ marks) with annealing ofboron implanted silicon in the processor of the present invention (0marks). The furnace annealed wafer experienced a dose of 9.6×10¹⁴ /cm²boron 11 implanted at 50 kev. The wafer was furnace annealed for 1000°C. at 30 minutes. The wafer treated in the processor of the presentinvention experienced a dose of 1×10¹⁵ /cm² boron 11 implanted at 50kev. The processor was operated at 4.5 kw for 10 seconds with thebackside of the wafer being exposed to the blackbody source of FIG. 4.The maximum distribution of the boron in the furnace annealed siliconwas about 0.72 m the maximum distribution of the boron treated in theprocessor of the present invention was about 0.55 m. In addition, thepeak distribution of boron in the silicon treated in the processor ofthe present invention was higher, a logical result since the originaldosages were comparable.

The process of the present invention can be seen by tracing a waferthrough the component time line chart of FIG. 5. Wafer #1 is placed inthe entry lock in the load step. The entry lock is pumped down to avacuum of about 0.1 Torr. After about 1 second the lock opens to thetreatment chamber and the wafer is then placed on the platen in thetreatment chamber. Once the treatment chamber is sealed and the platenis in position opposite to the blackbody source a constant planarthermal flux is applied for a time between about one second and aboutten seconds. When the maximum temperature is reached the blackbodyradiator is idled or shuttered and the platen rotated to a position atwhich the now-hot wafer can cool for about two seconds by radiatingenergy to the walls of the chamber. Alternatively, the blackbodyradiator may be programmed by microprocessor control to go through anytemperature cycle desired. The wafer is then loaded into the exit lockwhere the wafer is cooled by gas conduction and convection during exitlock venting. The wafer is then transferred from the exit lock to theoutside. A second wafer trails behind wafer 1 and other wafers areprocessed in succession. With the process of the present invention ahigh throughput, on the order of 150 to 250 wafers per hour is possible,with only several wafers being at risk at any point in time.

In practicing the process of the present invention, it is desirable toavoid contamination of the active surface of the wafer. This surface isespecially vulnerable to contamination from Na⁺ and heavy metals. Thus,only pure heat treated, carbon or metal foil thermal sources may beused. Graphite sources must be thoroughly cleaned, e.g., by vacuumfiring since C-V shifts indicate that metallic contaminants may bepresent without such firing. One variation in the practice of theprocess which avoids contamination is to slide the wafer into the platenwith the backside exposed. Thus, any contamination from the source wouldfall upon the backside of the wafer far away from the active regions onthe front side and would not interfere with device operation. Due to theplanar constant energy flux heating described previously, the top sideof the wafer will itself heat uniformly and shortly in time(miliseconds) after the exposed backside experiences the planarisotropic thermal front. The whole thickness of the wafer also heatsuniformly.

We claim:
 1. A blackbody radiation source for producing a constantplanar energy flux including infrared radiation in combination with asupport member for positioning a semiconductor wafer in close coupledopposition to said source, said support member comprising refractorymetal internal thermal shield means positioned on the opposite side ofsaid source from said wafer, for reflecting said infrared radiation andreducing thermal losses, and said internal shield means comprising aconcave shield member for receiving said semiconductor wafer for thermaltreatment, thereby providing uniform heating through the thickness ofsaid wafer.
 2. A blackbody radiation source in combination with saidsupport member in accordance with claim 1 in further combination withleaf spring means positioned along one edge of said internal thermalshield means to serve as a stop and positioning means for saidsemiconductor wafer so that said semiconductor wafer is presented inclose coupled opposition to said blackbody radiation source.
 3. Ablackbody radiation source in combination with said support member andleaf spring means in accordance with claim 2 wherein said leaf springmeans has a curvature comparable to the curvature of said semiconductorwafer to permit said wafer to rest edgewise against a portion of saidleaf spring means over a segment of its circumference.